 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2N3905, 2N3906 PNP Version 2004-01-20 Switching Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E 625 mW TO-92 (10D3) 0.18 g Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak collector current - Kollektorspitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCE0 - VEB0 Ptot - IC - ICM Tj TS Grenzwerte (TA = 25/C) 2N3905, 2N3906 40 V 40 V 5V 625 mW 1) 100 mA 200 mA 150/C - 55...+ 150/C Characteristics (Tj = 25/C) Min. Collector saturation volt. - Kollektor-Sattigungsspannung - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Collector cutoff current - Kollektorreststrom - VCE = 30 V, - VEB = 3 V Emitter cutoff current - Emitterreststrom - VCE = 30 V, - VEB = 3 V - IEBV - - ICEV - - VCEsat - VCEsat - VBEsat - VBEsat - - - - Kennwerte (Tj = 25/C) Typ. - - - - - - Max. 250 mV 400 mV 850 mV 950 mV 50 nA 50 nA Base saturation voltage - Basis-Sattigungsspannung 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 32 General Purpose Transistors 2N3905, 2N3906 Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 1 V, - IC = 0.1 mA - VCE = 1 V, - IC = 1 mA - VCE = 1 V, - IC = 10 mA - VCE = 1 V, - IC = 50 mA - VCE = 1 V, - IC = 100 mA 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE fT fT CCB0 CEB0 F F ton toff 30 60 40 80 50 100 30 60 15 30 200 MHz 250 MHz - - - - - - RthA Kennwerte (Tj = 25/C) Typ. - - - - - - - - - - - - - - - - - - Max. - - - - 150 300 - - - - - - 4.5 pF 10 pF 5 dB 4 dB 70 300 200 K/W 1) 2N3903, 2N3904 Gain-Bandwidth Product - Transitfrequenz - VCE = 20 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 5 V, IE = ie = 0, f = 100 kHz - VEB = 0.5 V, IC = ic = 0, f = 100 kHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 100 :A 2N3905 RG = 1 kS f = 10 Hz ...15.7 kHz 2N3906 Switching times - Schaltzeiten turn-on time turn-off time ICon = 10 mA, IBon = - IBoff = 1 mA Emitter-Base Capacitance - Emitter-Basis-Kapazitat Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 33 |
Price & Availability of 2N3906
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |